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| FDP65N06 60V N-Channel MOSFET June 2006 UniFET FDP65N06 60V N-Channel MOSFET Features * * * * * 65A, 60V, RDS(on) = 0.016 @VGS = 10 V Low gate charge ( typical 132nC) Low Crss ( typical 35pF) Fast switching Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G GDS TO-220 FDP Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) Parameter FDP65N06 60 65 41 260 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 430 65 13.5 4.5 135 1.08 -55 to +150 300 Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FDP65N06 0.92 62.5 Units C/W C/W (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP65N06 Rev. A1 FDP65N06 60V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP65N06 Device FDP65N06 Package TO-220 Reel Size -- Tape Width -- Quantity 50 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 125C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 32.5 A VDS = 40 V, ID = 32.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 60 ------ Typ -0.5 ----- Max Units --1 10 100 -100 V V/C A A nA nA Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 2.0 ---0.013 39 4.0 0.016 -V S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---1670 464 35 2170 600 52 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time (Note 4, 5) VDD = 30 V, ID = 65A, RG = 25 ----- 24 94 98 52 33 10 11 58 200 210 114 43 --- ns ns ns ns nC nC nC Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V, ID = 65A, VGS = 10 V (Note 4, 5) ---- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 47H, IAS =65A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 65A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 65 A VGS = 0 V, IS = 65 A, dIF / dt = 100 A/s (Note 4) ------ ---62 132 65 260 1.4 --- A A V ns nC 2 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 300 Top : V GS 150 C ID, Drain Current [A] 100 o 100 ID, Drain Current [A] 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V B ottom : 5 .5 V 25 C o 10 10 -5 5 C o 2 0.1 1 * N otes : 1. 250s Pulse Test o 2. T C = 25 C 10 * N o te s : 1 . V DS = 4 0 V 2 . 2 5 0 s P u ls e T e s t 1 2 4 6 8 10 V D S , D rain-S ource V oltage [V ] V G S , G a te -S o urc e V o lta ge [V ] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.14 100 RDS(ON) [], Drain-Source On-Resistance 0.12 0.10 VGS = 10V 0.08 IDR, Reverse Drain Current [A] 10 0.06 150 C 25 C * Note : 1. VGS=0V 2. 250s Pulse Test 0 0 0.04 VGS = 20V 0.02 * Note : TJ = 25 C 0 5 10 15 20 o 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VDS, Source-Drain Violtage [V] Figure 5. Capacitance Characteristics 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 10 VDS = 12V VDS = 30V VDS = 48V 3000 Coss Ciss * Note : 1. VGS = 0 V 2. f = 1 MHz VGS, Gate-Source Voltage [V] Capacitances [pF] 8 2000 6 4 1000 Crss 2 * Note : ID = 65A 0 0 10 20 30 40 0 -1 10 10 0 10 1 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 32.5 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 80 10 3 10 s 10 2 70 60 100 s 1ms 10ms 100ms DC ID, Drain Current [A] ID, Drain Current [A] 2 50 40 30 20 10 0 25 10 1 Operation in This Area is Limited by R DS(on) 10 0 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 10 0 10 1 10 50 75 100 o 125 150 VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 D=0.5 Z? JC Thermal Response (t), 0.2 10 -1 0.1 0.05 0.02 0.01 10 -2 single pulse * Notes : 0 1. ZJC(t) = 0.92 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] 4 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters 7 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST(R) ACExTM ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FDP65N06 Rev. A1 www.fairchildsemi.com |
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